IBD-230 - 2' 25nm AlN on N-Si(111) / 20 nm NbN - 800°C - 70% output - 30/3.3 sccm - direct contact - 2.6 mTorr - 5 rpm - 205mA - 160 sec - 20211118
Background of the M.C. (Main chamber): 8e-8 torr
Substrate: 2' 25nm AlN on N-Si(111)
Mounting: Direct contact to heater
Temp. of Sub. (set / emissivity / before growth / after growth ): 800 / 0.65 / 705 °C / 650 °C , 800 / 0.16 / NA / 800 °C
NbN
Ar/N2: 30 sccm / 3.3 sccm
APC: set value of the APC position is 235 (the pressure shows 2.4-3.1 mTorr)
DC current/ volt./ Watt.: 205 mA/ 598 V/ 122 W
Pre- deposit time: 300 sec.
Deposit time: 160 sec.; Thickness: 10 nm (Deposition rate of IBD-206 determined by HRTEM is 0.062 nm/sec)
Thickness: nm (from SEM cross-section), Deposition rate: nm/sec
The critical Temp of NbN film/ AlN / Si (Tcmid):