IBD-176(T)-20190604
Sample number: "IBD-176(T)-NbN on 4HSiC (Ag)-900C-30/6 sccm-3.4 mTorr-236 mA-4056 sec.-20190604
Background of the M.C. (Main chamber): 2.8*1e-8 torr
Substrate: 20"-BOE etched- 4HSiC (5 big chips)
Mounting: Silver glue
Temp. of Sub. (set /after growth/ holder): 900/ 790/ 580 degree C
Ar/N2: 30 sccm/6 sccm
APC: set value of the APC position is 225 (the pressure shows 3.1-3.6 mTorr)
DC current/ volt./ Watt.: 236 mA/ 533-531 V/ 126-125 W
Pre- deposit time: 300 sec.
Deposit time: 4056" sec.; Thickness: ~77 nm
Purpose: various N2/(Ar+N2)= 16.7 %
The critical Temp of NbN film/ undoped 4H-SiC sub.: Tc0*=12.9 K; Tcmid*= 13.15 K (SDL)