Sample number: "IBD-40-NbN-SiC & MgO (Ag)-900C-30/3.3 sccm-2.6 mTorr-186mA-20160602"
Background of the M.C. (Main chamber): 2.5*1e-8 torr
Substrate: etched SiC/Si (20sec.), and MgO (new)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 796 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 225 (the pressure shows 2.4-2.9 mTorr)
DC current/ volt./ Watt.: 186 mA/ 584 V/ 109 W
Pre- deposit time: 300 sec.
Deposit time: 64 sec.; Thickness: 3.1 nm (maybe)
(Deposit Rate: 0.487 A/s)
The critical Temp (Tc) of NbN film/MgO: 13.4 K
The critical Temp (Tc) of NbN film/etched SiC: 11 K/ 10 (PPMS 20160706)