Sample number: "IBD-148-NbN on 4HSiC (Ag)-900C-30/3.3 sccm-2.4 mTorr-213mA-98 sec.-2018052301"
Background of the M.C. (Main chamber): 3*1e-8 torr
Substrate: 20"-BOE etched- 4HSiC (4 big and 5 small chips), 3C-SiC (0.5 big)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 734 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 213 mA/ 525 V/ 112 W
Pre- deposit time: 300 sec.
Deposit time: 98 sec.; Thickness: 5 nm
(The thickness determined by HRTEM of IBD-41 and IBD-67: y (nm)=(-0.25985)+0.05385x(sec.) )
The critical Temp of NbN film/etched undoped 4H-SiC sub.: