Sample number: "IBD-66-NbN/3C-SiC/Si-900C-30/3.3 sccm-2.4 mTorr-196mA-111 sec.-20161102"
Background of the M.C. (Main chamber): 2.4*1e-8 torr
Substrate: 20"-BOE etched-3C-SiC/Si
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 793 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 196 mA/ 568 V/ 112 W
Pre- deposit time: 300 sec.
Deposit time: 111 sec.; Thickness: 5.3 nm (~12 ML of NbN; 1ML of NbN is 0.439 nm)
(Deposite rate of IBD-41 determined by HRTEM is 0.475 nm/sec)
The critical Temp of NbN film/etched SiC (Tczero/Tcmid): 12.75K/13.32K