Sample number: "IBD-218(T)-NbN at RT-30/2.9 sccm-2.9 mTorr-290 mA-300 sec.-20210307
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: MgO, Si3N4, Si, testchip
Mounting: vacuum oil
Temp. of Sub. (set /after growth/ holder): 17→18 C
Ar/N2: 30 sccm/2.9 sccm
APC: set value of the APC position is 235 (the pressure shows 2.6-3.1 mTorr)
DC current/ volt./ Watt.: 290 mA/ 434-435 V/ 126 W
Pre- deposit time: 300 sec.
Deposit time: 300 sec.; Thickness:~48.5 nm
Purpose: NbN at RT
The critical Temp of NbN film: no Tc (insulating)