IBD-76-20161124
Sample number: "IBD-76-NbN-SiC (Ag)-900C-30/3.3 sccm-2.4 mTorr-197mA-40 sec.-20161124"
Background of the M.C. (Main chamber): 2.4*1e-8 torr
Substrate: 20"-BOE etched-3C-SiC/Si
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 788 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 197 mA/ 566 V/ 112 W
Pre- deposit time: 300 sec.
Deposit time: 40 sec.; Thickness: 1.9 nm (~4.3 ML of NbN; 1ML of NbN is 0.439 nm)
(The thickness determined by HRTEM of IBD-41 and IBD-67: y (nm)=(-0.25985)+0.05385x(sec.) )
The critical Temp of NbN film/etched SiC (Tczero/Tcmid): 8.4K/10.8K