Sample number: "IBD-58-NbN-SiC & MgO (Ag)-900C-30/3.3 sccm-2.4 mTorr-193mA-425 sec.-20160810"
Background of the M.C. (Main chamber): 2.4*1e-8 torr
Substrate: etched SiC/Si (20sec.), MgO (new)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 763 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 193 mA/ 578 V/ 111 W
Pre- deposit time: 300 sec.
Deposit time: 425 sec.; Thickness: 20.2 nm (~46 ML of NbN; 1ML of NbN is 0.439 nm)
(Deposite rate of IBD-41 determined by HRTEM is 0.475 nm/sec)
The critical Temp (Tc) of NbN film/MgO: 14.83K
The critical Temp (Tc) of NbN film/etched SiC: 13.512K (PPMS 20160812)