Sample number: "IBD-49-NbN-SiC & MgO (Ag)-900C-30/3.3 sccm-2.4 mTorr-190mA-83sec.-20160726"
Background of the M.C. (Main chamber): 1.7*1e-8 torr
Substrate: etched SiC/Si (20sec.), MgO (new)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 830 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 190 mA/ 582 V/ 111 W
Pre- deposit time: 300 sec.
Deposit time: 83 sec.; Thickness: 3.95 nm (~9 ML of NbN; 1ML of NbN is 0.439 nm)
(Deposite rate of IBD-41 determined by HRTEM is 0.475 nm/sec)
The critical Temp (Tc) of NbN film/MgO: /12.6K (20160729 PPMS)
The critical Temp (Tc) of NbN film/etched SiC: /11.8K (20160729 PPMS)