Run #359 NbN deposition
a. Wafer : SiO2/testchip
b. Wafer clean : No
c. Mounting : with diffusion pump oil
d. RF-clean : Yes, only N2
e. Working gas: Ar : 12 / N2 : 3.3 (SCCM), 7.4 mtorr
f. Thickness: 3042.2 A (10 sec.); Deposit Rate: 15.21 A/s
g. Current: 1.75 A