Sample number: "IBD-221(T)-NbN at RT-30/0.9 sccm-3.4 mTorr-255 mA-667 sec.-20210406
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: MgO, Si3N4, Si, testchip, fuse quartz, IBD-220-NbNx (with PN2=18%)/Si
Mounting: vacuum oil
Temp. of Sub. (set /after growth/ holder): 18→19 C
Ar/N2: 30 sccm/0.9 sccm
APC: set value of the APC position is 210 (the pressure shows 3.1-3.6 mTorr)
DC current/ volt./ Watt.: 290 mA/ 341-340 V/ 99-98 W
Pre- deposit time: 300 sec.
Deposit time: 667 sec.; Thickness:~ 172 nm
Purpose: NbN at RT
The critical Temp of NbN film: no Tc (insulating)