Sample number: "IBD-216(T)-NbN on 3C-SiC-900C-30/3.3 sccm-2.9 mTorr-270 mA-64 sec.-20210112 with C.L.
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: 100"-BOE etched- 3CSiC (9 chips with 10x10 mm^2)
Mounting: Silver glue
Temp. of Sub. (set /after growth/ holder): 900/ 800/ 565 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 235 (the pressure shows 2.6-3.1 mTorr)
DC current/ volt./ Watt.: 270 mA/ 444 V/ 120 W
Pre- deposit time: 300 sec.
Deposit time: 64 sec.; Thickness:~4 nm
Purpose: SNSPD
The critical Temp of NbN film/ undoped 3C-SiC sub.: