Sample number: "M3-008-Al-4 inch Si wafer (oil)-10 C- Ar 40 sccm-12 mTorr-0.4 A-500 sec.-2021072802"
Background of the M.C. (Main chamber): 1.87*1e-8 torr
Substrate: 4 inch Si wafer
Mounting: vacuum oil
Temp. of Sub. (set /after growth): 10/ ? degree C
Ar/O2/N2: 40 sccm/0/0
Working pressure: 12 mTorr (APC=5.6 %)
DC current/ volt./ Watt.: 0.4 A/ 321 V/ 122-138 W
Pre- deposit time: 5 mins.
Deposit time: 500 sec.; Thickness: 739.4 A (alpha-stepper), 766.4 A (Keyence, VK-X1000); Deposition Rate: 1.53 A/sec.
Thickness Uniformity (dmax.-dmin.)/(2*dave.)%: 3.72 %