Sample number: "IBD-3-NbN-double polished MgO-900 C-30/1.2sccm-11.4mTorr-236mA-20160113"
Background of the M.C. (Main chamber): 2.8*1e-8 torr
Substrate: double polished MgO
Mounting: Indium
Temp. of Sub.: 900 degree C
Ar/N2: 30sccm/1.2sccm
APC: set value of the APC position is 90 (the pressure shows 11.4-12.2 mTorr)
DC current: 236 mA
Pre- deposit time: 300 sec.
Deposit time: 500 sec.
The critical Temp (Tc): 14.1 K
The thickness of the film: 620.3 A (growth rate is about 1.24 A/Sec.)