Run #327 Al deposition
a. Wafer : for NbN HEB
b. Wafer clean : No
c. Mounting : with diffusion pump oil
d. Temp.: 10 C
e. RF-clean : No
f. Working gas: Ar : 12 (SCCM), 5.2 mtorr
g. Thickness: 105 A (57 sec.); Deposit Rate: 1.83 A/s
h. Current: 0.15 A