IBD-81-20170124
Sample number: "IBD-81-NbN-SiC (Ag)-900C-30/3.3 sccm-2.4 mTorr-200mA-55 sec.-20170124"
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: 20"-BOE etched- 3C-SiC/HRSi (2 cips with 100 mm^2), and 3C-SiC/Si (1 small chip)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 812 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 200 mA/ 557 V/ 112 W
Pre- deposit time: 300 sec.
Deposit time: 55 sec.; Thickness: 2.7 nm
(The thickness determined by HRTEM of IBD-41 and IBD-67: y (nm)=(-0.25985)+0.05385x(sec.) )
The critical Temp of NbN film/etched 3C-SiC/Si: Tczero=9K; Tcmid=10.9K (by PPMS)
The critical Temp of NbN film/etched 3C-SiC/HRSi: Tczero=9.8K; Tcmid=11K (by PPMS)