Sample number: "IBD-182(T)-NbN on 4HSiC (Ag)-900C-0/33.3 sccm-4.8 mTorr-165 mA-9000 sec.-20190613
Background of the M.C. (Main chamber): 2.8*1e-8 torr
Substrate: 20"-BOE etched- 4HSiC (5 big chips)
Mounting: Silver glue
Temp. of Sub. (set /after growth/ holder): 900/ 750/ 555 degree C
Ar/N2: 0 sccm/33.3 sccm
APC: set value of the APC position is 80 (the pressure shows 4.3-5.1 mTorr)
DC current/ volt./ Watt.: 165 mA/ 586-584 V/ 97-96 W
Pre- deposit time: 300 sec.
Deposit time: 9000 sec.; Thickness:
Purpose: various N2/(N2+Ar)= 100 %
The critical Temp of NbN film/ undoped 4H-SiC sub.: Tc0*=10.1 K; Tcmid*= 10.25 K (SDL)