IBD-168-20190502-Al
Sample number: "IBD-168-Al on testchips-RT-33.3/0 sccm-2.4 mTorr-213mA-3180 sec.-20190502"
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: testchips
Mounting: oil
Temp. of Sub. (set /after growth): 18-19 C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 255 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 213 mA/ 438 V/ 93 W
Pre- deposit time: 300 sec.
Deposit time: 3180 sec.; Thickness: ~ 295.2 nm
Purpose: deposition rate of Al ~0.9 A/sec. (in-situ Al layer for ARPES)