IBD-167(T)-20190430
Sample number: "IBD-167-2 nm AlN on NbN on 3C- and 4HSiC (Ag)-900C-30/3.3sccm-2.4 mTorr-221mA-3000 sec.-20190430"
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: 20"-BOE etched- 4HSiC (4 big chips), and 3C-SiC (4 chips)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ x degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 245 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 221 mA/ 515 V/ 114-115 W
Pre- deposit time: 300 sec.
Deposit time: 3000 sec.; Thickness: ~ 200nm
Purpose: thick films by the top Nb gun, N2/(Ar+N2)=9.9%
The critical Temp of NbN film/ undoped 4H-SiC sub.: Tc0*=12.6K; Tcmid*= 12.7K (SDL)
The critical Temp of NbN film/ 3C-SiC sub.: Tc x (SDL)