Sample number: "M3-005-Nb-4 inch Si wafer (oil)-10 C- Ar 30 sccm-8 mTorr-3.8 A-140 sec.-20210727"
Background of the M.C. (Main chamber): 2.06*1e-8 torr
Substrate: 4 inch Si wafer
Mounting: vacuum oil
Temp. of Sub. (set /after growth): 10/ ? degree C
Ar/O2/N2: 30 sccm/0/0
Working pressure: 8 mTorr
DC current/ volt./ Watt.: 3.8 A/ 360 V/ 1360 W
Pre- deposit time: 5 mins.
Deposit time: 140 sec.; Thickness: 3015.2 A (alpha-stepper), 3034.8 A (Keyence, VK-X1000); Deposition Rate: 21.67 A/sec.
Thickness Uniformity (dmax.-dmin.)/(2*dave.)%: 3.53 %