Sample number: "IBD-92-NbN-un doped-4HSiC (Si face) (Ag)-900C-30/3.3 sccm-2.1 mTorr-201mA-98 sec.-20170511"
Background of the M.C. (Main chamber): 2.1*1e-8 torr
Substrate: 20"-BOE etched- 3C-SiC/HRSi (1 cips with 10x10 mm^2), and un doped-4HSiC (Si face) (6 small chip)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 833 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 240 (the pressure shows 1.9-2.4 mTorr)
DC current/ volt./ Watt.: 202 mA/ 550 V/ 111 W
Pre- deposit time: 300 sec.
Deposit time: 98 sec.; Thickness: 5 nm
(The thickness determined by HRTEM of IBD-41 and IBD-67: y (nm)=(-0.25985)+0.05385x(sec.) )
The critical Temp of NbN film/etched 3C-SiC (Tczero): Tczero=12.2K; Tcmid (R=0.5R20K)= 12.8K (PPMS)
The critical Temp of NbN film/etched undoped 4H-SiC sub. (Si-face): Tczero=11K; Tcmid (R=0.5R20K)= 11.65K (PPMS)