Sample number: "IBD-177(T)-NbN on 4HSiC (Ag)-900C-30/2.9 sccm-2.4 mTorr-240 mA-2106 sec.-20190605
Background of the M.C. (Main chamber): 2.8*1e-8 torr
Substrate: 20"-BOE etched- 4HSiC (5 big chips)
Mounting: Silver glue
Temp. of Sub. (set /after growth/ holder): 900/ 760/ 575 degree C
Ar/N2: 30 sccm/2.9 sccm
APC: set value of the APC position is 240 (the pressure shows 2.4-2.9 mTorr)
DC current/ volt./ Watt.: 240 mA/ 493-492 V/ 118 W
Pre- deposit time: 300 sec.
Deposit time: 2106 sec.; Thickness: ~154 nm
Purpose: Compare the films deposited by the top gun to the films deposited by the oblique gun (IBD-157) which have the same deposition time.
The critical Temp of NbN film/ undoped 4H-SiC sub.: Tc0*=13.3 K; Tcmid*= 13.4 K (SDL)