IBD-165(T)-20190327
Sample number: "IBD-165-NbN on 4HSiC (Ag)-900C-30/2.9sccm-2.4 mTorr-204mA-920 sec.-20190327"
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: 20"-BOE etched- 4HSiC (5 big chips)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ x degree C
Ar/N2: 30 sccm/2.9 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 204 mA/ 549 V/ 112 W
Pre- deposit time: 300 sec.
Deposit time: 920 sec.; Thickness: ~66 nm
Purpose: test run for new Nb-Top target, various N2/(Ar+N2)=8.8%
The critical Temp of NbN film/ undoped 4H-SiC sub.: Tc0*=12.8K; Tcmid*= 12.9K (SDL)