Sample number: "IBD-48-NbN-SiC & MgO (Ag)-900C-30/3.3 sccm-2.4 mTorr-190mA-74sec.-20160720"
Background of the M.C. (Main chamber): 2.4*1e-8 torr
Substrate: etched SiC/Si (20sec.), MgO (new)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 775 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 190 mA/ 583 V/ 111 W
Pre- deposit time: 300 sec.
Deposit time: 74 sec.; Thickness: 3.5 nm (~8 ML of NbN; 1ML of NbN is 0.439 nm)
(Deposite rate of IBD-41 determined by HRTEM is 0.475 nm/sec)
The critical Temp (Tc mid) of NbN film/MgO: 13.7K (20160722 PPMS)
The critical Temp (Tc mid) of NbN film/etched SiC: 13.2K (20160722 PPMS) /13.1K (20160729 PPMS)/ 13K (201070316 PPMS)