Sample number: "IBD-50-NbN-SiC & MgO (Ag)-900C-30/3.3 sccm-2.4 mTorr-191mA-92sec.-20160727"
Background of the M.C. (Main chamber): 2.4*1e-8 torr
Substrate: etched SiC/Si (20sec.), MgO (new)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 793 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 191 mA/ 580 V/ 111 W
Pre- deposit time: 300 sec.
Deposit time: 92 sec.; Thickness: 4.39 nm (~10 ML of NbN; 1ML of NbN is 0.439 nm)
(Deposite rate of IBD-41 determined by HRTEM is 0.475 nm/sec)
The critical Temp (Tc) of NbN film/MgO: /13K (20160729 PPMS)
The critical Temp (Tc) of NbN film/etched SiC: /12.5K (20160729 PPMS)