Sample number: "IBD-180(T)-NbN on 4HSiC (Ag)-900C-30/45 sccm-4.6 mTorr-226 mA-9000 sec.-20190611
Background of the M.C. (Main chamber): 2.8*1e-8 torr
Substrate: 20"-BOE etched- 4HSiC (5 big chips)
Mounting: Silver glue
Temp. of Sub. (set /after growth/ holder): 900/ 770/ 563 degree C
Ar/N2: 30 sccm/45 sccm
APC: set value of the APC position is 230 (the pressure shows 4.3-5.1 mTorr)
DC current/ volt./ Watt.: 226 mA/ 568-565 V/ 128 W
Pre- deposit time: 300 sec.
Deposit time: 9000 sec.; Thickness:
Purpose: various N2/(N2+Ar)= 60 %
The critical Temp of NbN film/ undoped 4H-SiC sub.: Tc0*=11.3 K; Tcmid*= 11.45 K (SDL)