IBD-86-20170310
Sample number: "IBD-86-NbN-SiC (Ag)-850C-30/3.3 sccm-2.4 mTorr-201mA-98 sec.-20170310"
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: 20"-BOE etched- 3C-SiC/HRSi (3 cips with 100 mm^2), and 3C-SiC/HRSi (3 small chip)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 850/ 766 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 201 mA/ 553 V/ 111 W
Pre- deposit time: 300 sec.
Deposit time: 98 sec.; Thickness: 5 nm
(The thickness determined by HRTEM of IBD-41 and IBD-67: y (nm)=(-0.25985)+0.05385x(sec.) )
The critical Temp of NbN film/etched 3C-SiC/HRSi:
IBD-86-position04(front side): Tczero=11.5K; Tcmid=12.2K (by PPMS)
IBD-86-position06(lower side)Tczero=11.9K; Tcmid=12.55K (by PPMS)