Sample number: "IBD-172-NbN on 4HSiC (Ag)-900C-30/1.5 sccm-2.4 mTorr-241mA-723 sec.-20190521"
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: 20"-BOE etched- 4HSiC (5 big chips)
Mounting: Silver glue
Temp. of Sub. (set /after growth of sub./ holder): 900/ 815/ 620 degree C
Ar/N2: 30 sccm/1.5 sccm
APC: set value of the APC position is 250 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 241 mA/ 478 V/ 114-115 W
Pre- deposit time: 300 sec.
Deposit time: 723 sec.; Thickness: ~73 nm
Purpose: various N2/(Ar+N2)=4.8%
The critical Temp of NbN film/ undoped 4H-SiC sub.: Tc0*=5.9 K (SDL)