Run #357 NbN deposition
a. Wafer : SiO2/testchip
b. Wafer clean : No
c. Mounting : with diffusion pump oil
d. RF-clean : Yes, only N2
e. Working gas: Ar : 12 / N2 : 3 (SCCM), 7.4 mtorr
f. Thickness: 2500 A (200 sec.); Deposit Rate: 12.5 A/s
g. Current: 1.55 A
h. Tc= 13.3 K