Sample number: "IBD-194-TaN on 4HSiC and 3C-SiC-900C-30/3.3 sccm-4.1 mTorr-168 mA-212 sec.-20190926
Background of the M.C. (Main chamber): 3*1e-8 torr
Substrate: 20"-BOE etched- 4HSiC (3 chips with 10x9 mm^2), 3C-SiC (2 chips with 10x10 mm^2)
Mounting: Silver glue
Temp. of Sub. (set /after growth/ holder): 900/ 840/ 570 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 200 (the pressure shows 3.9-4.3 mTorr)
DC current/ volt./ Watt.: 165 mA/ 703 V/ 118 W
Pre- deposit time: 300 sec.
Deposit time: 212 sec.; Thickness:~10 nm
Purpose: TaN
The critical Temp of TaN film/ undoped 4H-SiC sub.: Insulating
The critical Temp of TaN film/ 3C-SiC/Si sub.: Tc0*= 5 K; Tcmid*= 5.53 K (SDL)