Sample number: "IBD-93-AlN-SiO2 (diffusion oil)-RT(20 C)-N2 33.3 sccm-2.1 mTorr-165mA-3180 sec.-20170516"
Background of the M.C. (Main chamber): 2.5*1e-8 torr
Substrate: 6000Å SiO2, and testchips
Mounting: difussion oil
Temp. of Sub. (set /after growth): 18/ 26 degree C
Ar/N2: 0 sccm/33.3 sccm
APC: set value of the APC position is 130 (the pressure shows 1.9-2.4 mTorr)
DC current/ volt./ Watt.: 165 mA/ 562 V/ 93 W
Pre- deposit time: 600 sec.
Deposit time: 3180 sec.; Thickness: 87.2 nm
(The thickness determined by alpha-step: 872 Å/3180 sec.; Deposition rate is 0.27 Å/sec.)