IBD-160-20181130
Sample number: "IBD-160-NbN on 4HSiC (Ag)-900C-30/3.3sccm-2.4 mTorr-243mA-376 sec.-20181130"
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: 20"-BOE etched- 4HSiC (5 big chips)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 795 degree C
Ar/N2: 30 sccm/2.7 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 243 mA/ 460 V/ 112 W
Pre- deposit time: 300 sec.
Deposit time: 376 sec.; Thickness: ~27 nm
Purpose: various N2/Ar
The critical Temp of NbN film/ undoped 4H-SiC sub.: Tc0*=11.6 K; Tcmid*= 12 K (SDL)