Sample number: "IBD-91-AlN-RT-33.3 sccm N2-2.1 mTorr-165mA-240 sec.-20170504"
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: 2.7 nm NbN (IBD-78); 4 nm NbN (IBD-89); 3C-SiC; MgO
Mounting: Diffusion oil
Temp. of Sub. (set /after growth): RT
Ar/N2: 0 sccm/33.3 sccm
APC: set value of the APC position is 130 (the pressure shows 1.9-2.4 mTorr)
DC current/ volt./ Watt.: 165 mA/ 562V/ 93 W
Pre- deposit time: 300 sec.
Deposit time: 240 sec. (10 r.p.m.); Thickness: 65 Å
(The thickness determined by IBD93: 87.2 nm/ 3180 sec.; Deposition rate: 0.27 Å/sec.)
The critical Temp of 2.7 nm-NbN (IBD-78) (Tczero): 10.5K by PPMS; Tcmid (R=0.5R20K)= 10.8K
The critical Temp of 6.5 nm-AlN/ 2.7 nm-NbN film (Tczero): 9.2K by PPMS; Tcmid (R=0.5R20K)= 10.3K