Sample number: "IBD-96-AlN on NbN/3C-SiC (diffusion oil)-RT-0/33.3 sccm-2.1 mTorr-rotate (10 r.p.m.)-165 mA-111 sec.-20170519"
Background of the M.C. (Main chamber): 2.4*1e-8 torr
Substrate: 0.87 nm-NbN film (IBD-94), and 0.44 nm-NbN film on 3C-SiC substrate (IBD-95)
Mounting: diffusion oil
Temp. of Sub. (set /after growth): RT, 18/ 21 degree C
Ar/N2: 0 sccm/33.3 sccm
APC: set value of the APC position is 0 (the pressure shows 1.9-2.4 mTorr)
DC current/ volt./ Watt.: 165 mA/ 561 V/ 93 W
Pre- deposit time: 600 sec.
Deposit time: 111 sec.; Thickness: 3 nm
(The thickness determined by IBD93: 87.2 nm/ 3180 sec.; Deposition rate: 0.27 Å/sec.)
The critical Temp of 0.87 nm-NbN (IBD-94) (Tc, R=0.9R20K): 2.2K by PPMS
The critical Temp of 3 nm-AlN/ 0.87 nm-NbN film (IBD-96-01) (Tc, R=0.9R20K): 2.4K by PPMS