IBD-161-20181203
Sample number: "IBD-161-NbN on 4HSiC (Ag)-900C-30/3.3sccm-2.4 mTorr-243mA-2106 sec.-20181203"
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: 20"-BOE etched- 4HSiC (5 big chips)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 839 degree C
Ar/N2: 30 sccm/2.7 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 245 mA/ 457 V/ 112 W
Pre- deposit time: 300 sec.
Deposit time: 2106 sec.; Thickness: ~154 nm
Purpose: Various N2/Ar