Sample number: "IBD-150-NbN on 4HSiC (Ag)-900C-30/2.9 sccm-2.4 mTorr-215mA-376 sec.-2018061401"
Background of the M.C. (Main chamber): 3*1e-8 torr
Substrate: 20"-BOE etched- 4HSiC (2 big and 1 small chips), and 3C-SiC (1 big)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 760 degree C
Ar/N2: 30 sccm/2.9 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 215 mA/ 520 V/ 112 W
Pre- deposit time: 300 sec.
Deposit time: 376 sec.; Thickness: 20 nm
(The thickness determined by HRTEM of IBD-41 and IBD-67: y (nm)=(-0.25985)+0.05385x(sec.) )
The critical Temp of NbN film/etched undoped 4H-SiC sub.: Tc0=12.2 K, Tcmid= 12.5 K