Sample number: "IBD-196(T)-NbN on 3C- and 4H-SiC-900C-30/3.3 sccm-3.1 mTorr-268 mA-61 sec.-20191225
Background of the M.C. (Main chamber): 2.4*1e-8 torr
Substrate: 20"-BOE etched- 3CSiC ( 5 chips with 10x10 mm^2) and 4HSiC ( 4 chips with 10x9 mm^2)
Mounting: Silver glue
Temp. of Sub. (set /after growth/ holder): 900/ 795/ 570 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 230 (the pressure shows 2.9-3.4 mTorr)
DC current/ volt./ Watt.: 268 mA/ 445 V/ 119 W
Pre- deposit time: 300 sec.
Deposit time: 61 sec.; Thickness:~3 nm
Purpose: 3 nm (001)-NbN for Ni test and HEB, Tc and Hc2 of (001)- and (111)-NbN
The critical Temp of NbN film/ undoped 3C-SiC sub.:
The critical Temp of NbN film/ undoped 4H-SiC sub.: