Sample number: "IBD-138-NbN-undoped-4HSiC (Si face) (Ag)-900C-30/3.3 sccm-2.4 mTorr-207mA-191 sec.-20171228"
Background of the M.C. (Main chamber): 2.1*1e-8 torr
Substrate: 20"-BOE etched- undoped-4HSiC (Si face) (2 big on Si face and 4 small chips on C face)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 844 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 207 mA/ 531 V/ 110 W
Pre- deposit time: 300 sec.
Deposit time: 191 sec.; Thickness: 10 nm
(The thickness determined by HRTEM of IBD-41 and IBD-67: y (nm)=(-0.25985)+0.05385x(sec.) )
The critical Temp of NbN film/etched undoped 4H-SiC sub. (Si-face): Tczero=K; Tcmid (R=0.5R20K)= K (SDL)