Sample number: "IBD-35-NbN-MgO (Ag)-900C-30/3sccm-2.6mTorr-188mA-2016051801"
Background of the M.C. (Main chamber): 2.1*1e-8 torr
Substrate: SiC (no BOE etching)
Mounting: Silver glue
Temp. of Sub.: 900 degree C (805 C)
Ar/N2: 30sccm/3sccm
APC: set value of the APC position is 225 (the pressure shows 2.4-2.9 mTorr)
DC current/ volt./ Watt.: 188 mA/583 V/ 110 W
Pre- deposit time: 300 sec.
Deposit time: 501 sec.; Thickness: 329.83 A
(Deposit Rate: 0.658 A/s)
The critical Temp (Tc): 14.8 K