Sample number: "IBD-192(T)-NbN on 4HSiC-900C-30/10 sccm-3.9 mTorr-257 mA-42 sec.-20190924
Background of the M.C. (Main chamber): 3*1e-8 torr
Substrate: 20"-BOE etched- 4HSiC (5 big chips)
Mounting: Silver glue
Temp. of Sub. (set /after growth/ holder): 900/ 820/ 577 degree C
Ar/N2: 30 sccm/10 sccm
APC: set value of the APC position is 230 (the pressure shows 3.6-4.1 mTorr)
DC current/ volt./ Watt.: 257 mA/ 501 V/ 129 W
Pre- deposit time: 300 sec.
Deposit time: 42 sec.; Thickness:~2.7 nm
Purpose: Ion gating effect for Dr. Lin CH
The critical Temp of NbN film/ undoped 4H-SiC sub.: