Sample number: "IBD-63-NbN-SiC & MgO (Ag)-900C-30/3.3 sccm-2.4 mTorr-194mA-32 sec.-20161013"
Background of the M.C. (Main chamber): 2.4*1e-8 torr
Substrate: etched SiC/Si (20sec.), MgO (new)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 763 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 194 mA/ 574 V/ 111 W
Pre- deposit time: 300 sec.
Deposit time: 32 sec.; Thickness: 1.5 nm (~3.5 ML of NbN; 1ML of NbN is 0.439 nm)
(Deposite rate of IBD-41 determined by HRTEM is 0.475 nm/sec)
The critical Temp of NbN film/etched SiC (Tczero/Tcmid): 5.9/8.6 (PPMS 20161014)