Sample number: "IBD-42-NbN-SiC & MgO (Ag)-900C-30/3.3 sccm-2.4 mTorr-186mA-58sec.-20160604"
Background of the M.C. (Main chamber): 2.5*1e-8 torr
Substrate: etched SiC/Si (20sec.), MgO (new), and no-etched SiC/Si
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 768 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 186 mA/ 585 V/ 109 W
Pre- deposit time: 300 sec.
Deposit time: 58 sec.; Thickness: 2.8 nm (maybe)
(Deposit Rate: 0.487 A/s)
The critical Temp (Tc) of NbN film/no-etched SiC:
The critical Temp (Tc) of NbN film/MgO: 11.35 K ( measurement date: 20160622)
The critical Temp (Tc) of NbN film/etched SiC: 10.95 K