IBD-162-20181203
Sample number: "IBD-162-NbN on 4HSiC (Ag)-900C-30/2.9sccm-2.4 mTorr-243mA-2106 sec.-20181203"
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: 20"-BOE etched- 4HSiC (5 big chips)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 781 degree C
Ar/N2: 30 sccm/2.9 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 243 mA/ 461 V/ 112 W
Pre- deposit time: 300 sec.
Deposit time: 376 sec.; Thickness: ~27 nm
Purpose: Various N2/Ar, Annealing by Dr. Oue
The critical Temp of NbN film/ undoped 4H-SiC sub.: Tc0*=11.5 K; Tcmid*= 11.85 K (SDL)