IBD-169(T)-20190502
Sample number: "IBD-169-3 nm Al on NbN on 3C- and 4HSiC (Ag)-900C-30/3.3sccm-2.4 mTorr-222mA-98 sec.-20190502"
Background of the M.C. (Main chamber): 2.4*1e-8 torr
Substrate: 20"-BOE etched- 4HSiC (4 big chips), and 3C-SiC (4 chips)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ x degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 245 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 222 mA/ 514 V/ 114 W
Pre- deposit time: 300 sec.
Deposit time: 98 sec.; Thickness: ~ 5.6 nm
Purpose: films for ARPES testing.
The critical Temp of NbN film/ undoped 4H-SiC sub.: Tc0*=9.3 K; Tcmid*= 10.4 K (SDL)
The critical Temp of NbN film/ 3C-SiC sub.: Tc0*=8.3 K; Tcmid*= 8.6 K (SDL)