Sample number: "IBD-174 (T)-NbN on 4HSiC (Ag)-900C-30/4.5sccm-3.1 mTorr-233mA-1754 sec.-20190528
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: 20"-BOE etched- 4HSiC (5 big chips)
Mounting: Silver glue
Temp. of Sub. (set /after growth of sub./ holder): 900/ 783/ 582 degree C
Ar/N2: 30 sccm/4.5 sccm
APC: set value of the APC position is 230 (the pressure shows 2.9-3.4 mTorr)
DC current/ volt./ Watt.: 233 mA/ 521 V/ 121 W
Pre- deposit time: 300 sec.
Deposit time: 1754 sec.; Thickness: ~77 nm
Purpose: various N2/(Ar+N2)=13 %
The critical Temp of NbN film/ undoped 4H-SiC sub.: