Sample number: "IBD-181(T)-NbN on 4HSiC (Ag)-900C-12/50 sccm-4.6 mTorr-218 mA-9000 sec.-20190612
Background of the M.C. (Main chamber): 2.8*1e-8 torr
Substrate: 20"-BOE etched- 4HSiC (5 big chips)
Mounting: Silver glue
Temp. of Sub. (set /after growth/ holder): 900/ 740/ 570 degree C
Ar/N2: 12 sccm/50 sccm
APC: set value of the APC position is 180 (the pressure shows 4.3-5.1 mTorr)
DC current/ volt./ Watt.: 218 mA/ 588-585 V/ 128-127 W
Pre- deposit time: 300 sec.
Deposit time: 9000 sec.; Thickness:
Purpose: various N2/(N2+Ar)= 80 %
The critical Temp of NbN film/ undoped 4H-SiC sub.: Tc0*=9.8 K; Tcmid*= 10.1 K (SDL)