IBD-173(T)-20190524
Sample number: "IBD-173-NbN on 4HSiC (Ag)-900C-30/4.1sccm-2.9 mTorr-230mA-1512 sec.-20190524
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: 20"-BOE etched- 4HSiC (5 big chips)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 718 degree C
Ar/N2: 30 sccm/4.1 sccm
APC: set value of the APC position is 235 (the pressure shows 2.6-3.1 mTorr)
DC current/ volt./ Watt.: 230 mA/ 517 V/ 118-119 W
Pre- deposit time: 300 sec.
Deposit time: 1512 sec.; Thickness: ~77 nm
Purpose: various N2/(Ar+N2)=12%
The critical Temp of NbN film/ undoped 4H-SiC sub.: Tc0*=12.8 K; Tcmid*= 12.95 K (SDL)