Sample number: "IBD-2-NbN-single polished MgO-800 C-30/1.2sccm-11.4mTorr-236mA-20160106"
Background of the M.C. (Main chamber): 2.8*1e-8 torr
Substrate: single polished MgO
Mounting: Indium
Temp. of Sub.: 800 degree C
Ar/N2: 30sccm/1.2sccm
APC: set value of the APC position is 90 (the pressure shows 11.4-12.2 mTorr)
DC current: 236 mA
Pre- deposit time: 300 sec.
Deposit time: 500 sec.
The critical Temp (Tc): 12.19 K
The thickness of the film: 634.5 A (growth rate is about 1.26 A/Sec.)