Sample number: "IBD-56-NbN-SiC & MgO (Ag)-900C-30/3.3 sccm-2.4 mTorr-192mA-342 sec.-2016080401"
Background of the M.C. (Main chamber): 2.4*1e-8 torr
Substrate: etched SiC/Si (20sec.), MgO (new)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 806 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 192 mA/ 579 V/ 111 W
Pre- deposit time: 300 sec.
Deposit time: 342 sec.; Thickness: 16.2 nm (~37 ML of NbN; 1ML of NbN is 0.439 nm)
(Deposite rate of IBD-41 determined by HRTEM is 0.475 nm/sec)
The critical Temp (Tc) of NbN film/MgO: 14.67K (PPMS 20160812)
The critical Temp (Tc) of NbN film/etched SiC: 13.16K (PPMS20160805)