Sample number: "IBD-205-AlN on 3C-SiC, quartz-RT-30/20 sccm-4.3 mTorr-rotate (10 r.p.m.)-245 mA-3000 sec.-20200108"
Background of the M.C. (Main chamber): 4.5*1e-8 torr
Substrate: 3C-SiC/HRSi (no HF) and quartz
Mounting: diffusion oil
Temp. of Sub. (set /after growth): RT, 17-21 C
Ar/N2: 30 sccm/20 sccm
APC: set value of the APC position is 260 (the pressure shows 3.9-4.6 mTorr)
DC current/ volt./ Watt.: 245 mA/ 479 V/ 117 W
Pre- deposit time: 300 sec.
Deposit time: 3000 sec.; Thickness: ~135 nm (0.045 nm/s)